Gallium oxide is an ultra-wide bandgap semiconductor (bandgap = 4.6 – 5.0 eV, depending on the
crystallographic phase) with exceptional properties, suitable for manufacturing new classes of
electronic devices (power diodes and transistors) and opto-electronic devices (UV-C light
detectors) [1]. The phases β (monoclinic) and κ (orthorhombic) of Ga2O3, grown as thin films on
hetero-substrates, present characteristic rotational domains of nanometric dimensions [2]. This is
the major structural defect found in Ga2O3 material, and has negative consequences in terms of
low electronic mobility, poor ferroelectric and optical properties. To prevent the formation of
rotational domains, or significantly expand their dimensions, it is first necessary to fully understand
their origin and crystallographic features, and then develop an effective strategy for obtaining films
with higher structural quality and electronic devices with improved performance.
Docente di riferimento
Prof. Roberto Fornari roberto.fornari@unipr.it
Bigliografia
[1] M. Pavesi et al. “ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors”, Mater.
Chem. Phys. 205 (2018) 502-507 https://doi.org/10.1016/j.matchemphys.2017.11.023
[2] P. Mazzolini et al. “Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its
Impact on the In-Plane Electronic Conduction”, Advanced Functional Materials 33 (2023) 2207821
https://doi.org/10.1002/adfm.202207821
